Write verification and resistive state determination based on cell turn-on characteristics for resistive random access memory
US10354728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2017 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Jul 7, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
After programming a set of resistive memory cells in a resistive memory device, the programmed states and the functionality of each resistive memory cell in the programmed set can be verified by a primary determination method and a secondary determination method. The primary determination method employs the step of determining whether a measured electrical current at a preset read voltage for the selected resistive memory cell is within electrical current specification for the selected resistive state. If the selected cell fails the primary determination method, the second determination method is performed, which includes determining whether a measured threshold voltage for the selected resistive memory cell is within threshold voltage specification for the selected resistive state. If the selected cell fails both methods, the selected cell is identified as a non-functional resistive memory cell. Otherwise, the selected cell is identified as an operational cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.