Inventor · Menlo Park, CA, US

Juan Saenz

15Patents

5h-index

21Co-inventors

58Inventor score

Filing activity: Sep 29, 2015 → Jul 19, 2023

Most-cited inventions

Patent	Title	Area	Cited by	Status
US9805793B2	Filament confinement in reversible resistance-switching memory elements	Electricity	10	Active
US10354728B2	Write verification and resistive state determination based on cell turn-on characteristics for resistive random access memory	Physics	6	Active
US9576657B1	Memory cells including vertically oriented adjustable resistance structures	Electricity	6	Active
US10153430B1	Germanium-based barrier modulated cell	Electricity	5	Active
US10032908B1	Multi-gate vertical field effect transistor with channel strips laterally confined by gate dielectric layers, and method of making thereof	Electricity	5	Active
US9741768B1	Controlling memory cell size in three dimensional nonvolatile memory	Electricity	3	Active
US10109680B1	Methods and apparatus for three-dimensional nonvolatile memory	Physics	3	Active
US10256402B1	ReRAM read state verification based on cell turn-on characteristics	Electricity	3	Active
US10283708B2	Methods and apparatus for three-dimensional nonvolatile memory	Electricity	2	Active
US10319437B2	Apparatus and method for identifying memory cells for data refresh based on monitor cell in a resistive memory device	Physics	0	Active
US9748479B2	Memory cells including vertically oriented adjustable resistance structures	Electricity	0	Active
US10354724B2	Methods and apparatus for programming barrier modulated memory cells	Physics	0	Active
US10283567B2	Methods and apparatus for three-dimensional nonvolatile memory	Electricity	0	Active
US11894037B2	First fire and cold start in memories with threshold switching selectors	Electricity	0	Active
US12424293B2	One-time programmable memory devices and methods	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.