Semiconductor device and method of forming the same
US10354876B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 24, 2018 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Jun 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of forming the same, the semiconductor device includes a substrate and a material layer. The substrate has a first region, and the material layer is disposed on the substrate. The material layer includes plural of first patterns and plural of second patterns arranged in an array, and two third patterns. The first patterns are disposed within the first region, the second patterns are disposed at two opposite outer sides of the first region, and the third patterns are disposed at another two opposite outer sides of the first region, wherein each of the third patterns partially merges each of a part of the first patterns and each of a part of the second patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.