Low thermal budget crystallization of amorphous metal silicides
US10354882B2 · kind B2 · utility
0Cited by
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20Claims
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Key dates
| Filing date | Apr 26, 2018 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Apr 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a metal silicide film with low resistivity at low temperature are described. A metal silicide film is formed on a substrate surface and annealed at high pressure and low temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.