Atomic layer etching of metal oxide
US10354887B2 · kind B2 · utility
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3References
10Claims
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Key dates
| Filing date | Sep 27, 2017 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Sep 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching a metal oxide layer on a semiconductor substrate, comprising providing a plurality of cycles, is provided. Each cycle comprises exposing the metal oxide layer to a reactive hydrogen-containing gas or plasma to transform a part of the metal oxide layer into a layer of metal hydride, stopping the exposing the metal oxide layer to the reactive hydrogen-containing gas or plasma, heating the layer of metal hydride to at least a sublimation temperature to sublime the layer of metal hydride, and cooling the metal oxide layer to a temperature below the sublimation temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.