Inventor · Milpitas, CA, US

Nerissa Draeger

25Patents
14h-index
48Co-inventors
77Inventor score

Filing activity: Oct 16, 2003 → Jun 26, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US8187951B1 CVD flowable gap fill Electricity 530 Active
US8278224B1 Flowable oxide deposition using rapid delivery of process gases Electricity 357 Active
US8058179B1 Atomic layer removal process with higher etch amount Electricity 270 Active
US7166531B1 VLSI fabrication processes for introducing pores into dielectric materials Emerging Cross-Sectional Technologies 119 Expired
US7629227B1 CVD flowable gap fill Electricity 51 Active
US7107998B2 Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus Chemistry; Metallurgy 45 Expired
US7510982B1 Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles Electricity 42 Expired
US8685867B1 Premetal dielectric integration process Electricity 32 Active
US8846536B2 Flowable oxide film with tunable wet etch rate Electricity 31 Active
US8278216B1 Selective capping of copper Electricity 23 Active
US8728958B2 Gap fill integration Electricity 22 Active
US8062983B1 Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles Electricity 16 Active
US9245739B2 Low-K oxide deposition by hydrolysis and condensation Electricity 14 Active
US7629224B1 VLSI fabrication processes for introducing pores into dielectric materials Emerging Cross-Sectional Technologies 14 Active
US9064684B1 Flowable oxide deposition using rapid delivery of process gases Electricity 13 Active
US9257302B1 CVD flowable gap fill Electricity 13 Active
US10049921B2 Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor Electricity 11 Active
US9299559B2 Flowable oxide film with tunable wet etch rate Electricity 10 Active
US9847222B2 Treatment for flowable dielectric deposition on substrate surfaces Electricity 10 Active
US7972976B1 VLSI fabrication processes for introducing pores into dielectric materials Emerging Cross-Sectional Technologies 3 Active
US9627608B2 Dielectric repair for emerging memory devices Electricity 2 Active
US11520953B2 Predicting etch characteristics in thermal etching and atomic layer etching Physics 1 Active
US9988715B2 Interface engineering during MGO deposition for magnetic tunnel junctions Electricity 1 Active
US10354887B2 Atomic layer etching of metal oxide Electricity 0 Active
US10847375B2 Selective atomic layer etching Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.