Wafer dividing method
US10354919B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2016 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Nov 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67092
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for dividing a wafer having a wiring layer including Cu on the front side, the front side of the wafer being partitioned by a plurality of crossing division lines to define a plurality of separate regions where a plurality of devices are formed. The method includes a laser processed groove forming step of applying a laser beam to the wiring layer along each division line to thereby remove the wiring layer along each division line and form a laser processed groove along each division line, a cutting step of using a cutting blade having a thickness smaller than the width of each laser processed groove to fully cut the wafer along each laser processed groove after performing the laser processed groove forming step, and a dry etching step of dry-etching at least each laser processed groove after performing the laser processed groove forming step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.