Selective etching of reactor surfaces
US10358599B2 · kind B2 · utility
0Cited by
13References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2016 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Mar 3, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.