Method for depositing high deposition rate, thick tetraethyl orthosilicate film with low compressive stress, high film stability and low shrinkage
US10358717B2 · kind B2 · utility
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11References
18Claims
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Key dates
| Filing date | Apr 21, 2017 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Apr 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for reducing post-annealing shrinkage of silicon dioxide film includes arranging a substrate on a substrate support in a processing chamber; setting a pressure in the processing chamber to a predetermined pressure range; setting a temperature of the substrate support to a predetermined temperature range; supplying a process gas mixture to a gas distribution device. The process gas mixture includes TEOS gas, a gas including an oxygen species, and argon gas. The argon gas comprises greater than 20% of the process gas mixture by volume. The method further includes striking plasma and depositing the film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.