Patent · US Active

Phosphine co-gas for carbon implants

US10361081B2 · kind B2 · utility

0Cited by
1References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 9, 2017
Grant dateJul 23, 2019
Priority date
Expiry dateNov 11, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/31701
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.