Phosphine co-gas for carbon implants
US10361081B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Nov 9, 2017 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Nov 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.