Plasma processing method
US10361089B2 · kind B2 · utility
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Key dates
| Filing date | May 25, 2018 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | May 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing method according to an exemplary embodiment includes a process of applying a first plasma processing to a substrate in a chamber, and a process of applying a second plasma processing to the substrate in the chamber. In the process of applying the first plasma processing, a plurality of first heaters in a chuck main body of an electrostatic chuck are driven, and a plurality of second heaters in the chuck main body are driven. In the process of applying the second plasma processing, the driving of at least the plurality of second heaters is stopped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.