High aspect ratio gap fill
US10361112B2 · kind B2 · utility
2Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2017 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Oct 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/101
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a method of forming a dielectric layer or a dielectric stack on a photoresist layer while minimizing or avoiding damage to the photoresist. In addition, the dielectric layer or dielectric stack can till high-aspect ratio openings and can be removed with etching. The dielectric layer or dielectric stack can be deposited with a conformal, low-temperature chemical vapor deposition process or a conformal, low-temperature atomic layer deposition process that utilizes a number of precursors and plasmas or reactant gases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.