Self-aligned double patterning formed fincut
US10361129B1 · kind B1 · utility
6Cited by
10References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2018 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | May 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and devices for forming multiple fin lengths includes forming a material stack on vertical fins. A plurality of mandrels are formed on the material stack. Spacers are formed along the plurality of mandrels with the spacers width being a length of short fins. One or more of the plurality of mandrels are removed. The material stack is patterned to form the short fins beneath the spacers and long fins. The vertical fins are cut with the pattern of the material stack to form the short fins and the long fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.