Surface nitridation in metal interconnects
US10361153B2 · kind B2 · utility
0Cited by
33References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 30, 2017 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Oct 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming vias include nitridizing exposed surfaces of a first layer and an exposed surface of a conductor underlying the first layer to form a layer of nitridation at said exposed surfaces. Material from the layer of nitridation at the exposed surface of the underlying conductor is etched away. The exposed surface of the underlying conductor is etched away to form a recessed area in the underlying conductor after etching away material from the layer of nitridation. A conductive via that forms a conductive contact with the underlying conductor is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.