Vertical fin-type devices and methods

US10361293B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Tsung-Che Tsai · Hsinchu, TW
• Alain Loiseau · Williston, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Souvick Mitra · South Burlington, US
• You Li · South Burlington, US
• Mickey H. Yu · South Burlington, US

Key dates

• Filing date: Jan 24, 2018
• Grant date: Jul 23, 2019
• Expiry date: Jan 24, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/713
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is an integrated circuit (IC) structure that incorporates a string of vertical devices. Embodiments of the IC structure include a string of two or more vertical diodes. Other embodiments include a vertical diode/silicon-controlled rectifier (SCR) string and, more particularly, a diode-triggered silicon-controlled rectifier (VDTSCR). In any case, each embodiment of the IC structure includes an N-well in a substrate and, within that N-well, a P-doped region and an N-doped region that abuts the P-doped region. The P-doped region can be anode of a vertical diode and can be electrically connected to the N-doped region (e.g., by a local interconnect or by contacts and metal wiring) such that the vertical diode is electrically connected to another vertical device (e.g., another vertical diode or a SCR with vertically-oriented features). Also disclosed is a manufacturing method that can be integrated with methods of manufacturing vertical field effect transistors (VFETs).