Pattern forming method
US10366888B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 14, 2018 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Jun 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31058
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.