Patent · US Active

Methods for forming a semiconductor device using tilted reactive ion beam

US10366895B2 · kind B2 · utility

1Cited by

4References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Johannes Georg Laven · Taufkirchen, DE
Anton Mauder · Kolbermoor, DE
Hans-Joachim Schulze · Taufkirchen, DE
Werner Schustereder · Villach, AT

Key dates

Filing date	Aug 28, 2017
Grant date	Jul 30, 2019
Priority date	—
Expiry date	Aug 28, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/405
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.