Patent · US Active

Method of detecting a condition

US10366899B2 · kind B2 · utility

0Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 19, 2017
Grant dateJul 30, 2019
Priority date
Expiry dateJun 19, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/088
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method is for detecting a condition associated with a final phase of a plasma dicing process. The method includes providing a non-metallic substrate having a plurality of dicing lanes defined thereon, plasma etching through the substrate along the dicing lanes, wherein during the plasma etching infrared emission emanating from at least a portion of the dicing lanes is monitored so that an increase in infrared emission from the dicing lanes is observed as the final phase of the plasma dicing operation is entered, and detecting the condition associated with the final phase of the plasma dicing from the monitored infrared emission.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.