Semiconductor structure having air gap between gate electrode and distal end portion of active area
US10366993B2 · kind B2 · utility
2Cited by
7References
9Claims
0Family size
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Key dates
| Filing date | Jul 21, 2017 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Jul 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/679
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a semiconductor substrate having a trench isolation region formed therein. A conductive gate electrode is buried in the trench isolation region. An air gap is disposed between the conductive gate electrode and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.