Method of inspecting wafer using electron beam
US10373796B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 29, 2016 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Oct 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.