CVD silicon monolayer formation method and gate oxide ALD formation on semiconductor materials
US10373824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Oct 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300° C. and 500° C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300° C. and 500° C. A layered composition includes a first layer selected from the group consisting of InxGa1−xAs, InxGa1−xSb, InxGa1−xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.