Capacitor structure and fabrication method thereof
US10373957B2 · kind B2 · utility
4Cited by
1References
12Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 28, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Dec 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor structure includes a semiconductor substrate, a dielectric layer disposed on the semiconductor substrate, a storage node pad disposed in the dielectric layer, and a cylindrical lower electrode including a bottom portion recessed into the dielectric layer and in contact with the storage node pad. The bottom extends to a sidewall of the storage node pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.