Semiconductor device and method for manufacturing the same
US10374058B2 · kind B2 · utility
2Cited by
10References
20Claims
0Family size
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Key dates
| Filing date | Sep 15, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Sep 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device includes forming a gate electrode layer in a gate trench; filling a recess in the gate electrode layer with a dielectric feature; and etching back the gate electrode layer from top end surfaces of the gate electrode layer while leaving a portion of the gate electrode layer under the dielectric feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.