Perpendicular magnetic tunnel junction having improved reference layer stability
US10374147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Dec 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic data recording element for magnetic random access memory data recording. The magnetic data recording element includes a magnetic tunnel junction element that includes a magnetic reference layer, a magnetic free layer and a non-magnetic barrier layer located between the non-magnetic reference layer and the magnetic free layer. The magnetic reference layer includes a layer of Hf that causes the magnetic reference layer to have an increased perpendicular magnetic anisotropy. This increased perpendicular magnetic anisotropy improves reliability and stability of the magnetic data recording element by preventing loss of magnetic orientation of the magnetic reference layer such as during high writing current conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.