Jorge Vasquez
31Patents
3h-index
17Co-inventors
56Inventor score
Filing activity: Apr 28, 2010 → Apr 15, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10916696B2 | Method for manufacturing magnetic memory element with post pillar formation annealing | Electricity | 5 | Active |
| US8088224B2 | Roll-to-roll evaporation system and method to manufacture group IBIIAVIA photovoltaics | Emerging Cross-Sectional Technologies | 3 | Active |
| US9524469B1 | Systems, apparatus, and methods for generating prediction sets based on a known set of features | Physics | 3 | Active |
| US10374147B2 | Perpendicular magnetic tunnel junction having improved reference layer stability | Electricity | 2 | Active |
| US10963806B2 | Systems, apparatus, and methods for generating prediction sets based on a known set of features | Physics | 2 | Active |
| US11257000B2 | Systems, apparatus, and methods for generating prediction sets based on a known set of features | Electricity | 2 | Active |
| US11636367B2 | Systems, apparatus, and methods for generating prediction sets based on a known set of features | Physics | 2 | Active |
| US9996800B2 | Systems, apparatus, and methods for generating prediction sets based on a known set of features | Physics | 2 | Active |
| US10879454B2 | Magnetic tunnel junction memory element with improved reference layer stability for magnetic random access memory application | Electricity | 1 | Active |
| US10367136B2 | Methods for manufacturing a perpendicular magnetic tunnel junction (p-MTJ) MRAM having a precessional spin current injection (PSC) structure | Electricity | 1 | Active |
| US10651370B2 | Perpendicular magnetic tunnel junction retention and endurance improvement | Electricity | 1 | Active |
| US8772076B2 | Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells | Emerging Cross-Sectional Technologies | 0 | Active |
| US10461242B2 | Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications | Electricity | 0 | Active |
| US11264557B2 | High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices | Electricity | 0 | Active |
| US10784439B2 | Precessional spin current magnetic tunnel junction devices and methods of manufacture | Electricity | 0 | Active |
| US10374153B2 | Method for manufacturing a magnetic memory device by pre-patterning a bottom electrode prior to patterning a magnetic material | Electricity | 0 | Active |
| US11484956B1 | Carpenter's accordion | Performing Operations; Transporting | 0 | Active |
| US11162981B2 | Magnetic field transducer mounting methods for MTJ device testers | Electricity | 0 | Active |
| US10879457B2 | Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same | Electricity | 0 | Active |
| US11925125B2 | High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices | Electricity | 0 | Active |
| US10446744B2 | Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same | Electricity | 0 | Active |
| US10388853B2 | Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers | Electricity | 0 | Active |
| US11545620B2 | Methods of manufacture precessional spin current magnetic tunnel junction devices | Electricity | 0 | Active |
| US10840436B2 | Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture | Physics | 0 | Active |
| US10684310B2 | Magnetic field transducer mounting apparatus for MTJ device testers | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.