Method for manufacturing a magnetic memory device by pre-patterning a bottom electrode prior to patterning a magnetic material
US10374153B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Aug 6, 2019 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a magnetic random access memory element that allows for improved magnetic element pillar formation in a high density magnetic memory element array. The method allows a magnetic memory element pillar to be formed by ion milling with a lower pillar height for reduced shadowing effect. A memory element seed layer and under-layer are first formed on a substrate and layer of electrically insulating material such as silicon oxide is deposited. A chemical mechanical polishing process is performed, leaving the seed layer and under-layer surrounded by a layer of electrically insulating material having an upper surface that is coplanar with an upper surface of the under-layer. A magnetic memory element pillar is formed over the seed layer and under-layer by depositing the magnetic memory element material, forming a mask over the magnetic memory element material and performing an ion milling process to form a magnetic memory element pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.