Patent · US Active

In-die transistor characterization in an IC

US10379155B2 · kind B2 · utility

0Cited by
10References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 2, 2014
Grant dateAug 13, 2019
Priority date
Expiry dateJun 2, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R31/2843
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

In an example implementation, an integrated circuit (IC) includes: a plurality of transistors disposed in a plurality of locations on a die of the IC; conductors coupled to terminals of each of the plurality of transistors; a digital-to-analog converter (DAC), coupled to the conductors, to drive voltage signals to the plurality of transistors in response to a digital input; and an analog-to-digital converter (ADC), coupled to at least a portion of the conductors, to generate samples in response to current signals induced in the plurality of transistors in response to the voltage signals, the samples being indicative of at least one electrostatic characteristic for the plurality of transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.