Patent · US Active

Non-contact measurement of memory cell threshold voltage

US10381101B2 · kind B2 · utility

0Cited by

3References

3Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Amitava Majumdar · Boise, US
Rajesh Kamana · Boise, US
Hongmei Wang · Boise, US
Shawn D. Lyonsmith · Boise, US
Ervin T. Hill · Boise, US
Zengtao T. Liu · Boise, US
Marlon W. Hug · Kuna, US

Key dates

Filing date	Dec 20, 2017
Grant date	Aug 13, 2019
Priority date	—
Expiry date	Dec 20, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/021
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.