Plasma processing apparatus and plasma processing method
US10381198B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2013 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Sep 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a plasma processing apparatus includes: a chamber; an introducing part; a counter electrode; a high-frequency power source; and a plurality of low-frequency power sources. A substrate electrode is disposed in the chamber, a substrate is directly or indirectly placed on the substrate electrode, and the substrate electrode has a plurality of electrode element groups. The introducing part introduces process gas into the chamber. The high-frequency power source outputs a high-frequency voltage for ionizing the process gas to generate plasma. The plurality of low-frequency power sources apply a plurality of low-frequency voltages of 20 MHz or less with mutually different phases for introducing ions from the plasma, to each of the plurality of electrode element groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.