Process for performing self-limited etching of organic materials
US10381238B2 · kind B2 · utility
0Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2018 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Mar 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for selectively etching an organic material on a substrate is described. The method and apparatus includes forming a first plasma-excited process gas containing hydrogen (H) and optionally a noble gas element, exposing the substrate to the first plasma-excited process gas, forming a second plasma-excited process gas containing a noble gas element, exposing the substrate to the second plasma-excited process gas, and cyclically repeating the forming and exposing the first and second plasma-excited process gases at least two cycles to etch the first material selectively relative to the second material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.