Method of forming semiconductor device
US10381239B2 · kind B2 · utility
1Cited by
4References
10Claims
0Family size
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Key dates
| Filing date | Aug 19, 2018 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Aug 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes following steps. First of all, a substrate is provided, and a stacked structure is formed on the substrate. Then, a patterned silicon-containing mask layer is formed on the stacked structure, and the stacked structure is partially removed through the patterned silicon-containing mask layer, to form plural openings in the stacked structure. Following these, a bromine covering process is performed, to form a bromide layer on a portion of the patterned silicon-containing mask layer, and a bromide sublimation process is then performed, to completely remove the bromide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.