Method for making a semiconductor device including a superlattice as a gettering layer
US10381242B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 16, 2018 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | May 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor processing method may include forming a superlattice gettering layer on a front side of a semiconductor substrate having a first thickness, epitaxially growing an active semiconductor layer on the superlattice gettering layer opposite the semiconductor substrate, forming at least one semiconductor device in the active semiconductor layer, and forming at least one metal interconnect layer on the active layer, and at least one metal through-via extending from the at least one metal interconnect layer into the semiconductor substrate. The method may further include thinning the semiconductor substrate from a back side thereof to a second thickness less than the first thickness, and thinning the semiconductor substrate. The superlattice gettering layer getters metal ions released by the forming of the at least one metal interconnect layer and at least one metal through-via, and thinning the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.