Semiconductor memory device and a manufacturing method thereof
US10381306B2 · kind B2 · utility
1Cited by
4References
4Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 28, 2017 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Dec 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device and a manufacturing method thereof are provided in the present invention. An under-cut structure is formed at an edge of a bit line contact opening in the process of forming the bit line contact opening for avoiding short problems caused by alignment shifting, and the process window of the process of forming the bit line contact opening may be improved accordingly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.