MRAM device with improved seal ring and method for producing the same
US10381403B1 · kind B1 · utility
1Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2018 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Jun 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a MRAM device free of seal ring peeling defect, and the resulting device, are provided. Embodiments include forming magnetic tunnel junction (MTJ) over a metallization layer in a seal ring region of an MRAM device; forming a metal filled via connecting the MTJ and the metallization layer; forming a tunnel junction via over the MTJ; and forming a top electrode over the tunnel junction via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.