Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end
US10381431B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2017 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Oct 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Artificial synaptic devices with an HfO2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400° C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.