Patent · US Active

Methodology for post-integration awareness in optical proximity correction

US10386715B2 · kind B2 · utility

2Cited by

1References

15Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Feng Wang · Beijing, CN
Hongxin Zhang · Zhejiang, CN
Shaowen Gao · Shanghai, CN
Norman Chen · Poughkeepsie, US

Key dates

Filing date	Oct 12, 2017
Grant date	Aug 20, 2019
Priority date	—
Expiry date	Oct 12, 2037

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/36
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method of creating an optical proximity correction (OPC) model and assessing the model through optical rule checking (ORC) includes the introduction of post-integration, i.e., post-metallization data. High density critical dimension scanning electron microscopy and backscattered electron scanning electron microscopy from a metallized structure are used during development and verification of the model to accurately predict post-integration behavior.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.