Patent · US Active

Formation of epitaxial layers via dislocation filtering

US10388509B2 · kind B2 · utility

0Cited by

1,239References

16Claims

0Family size

Assignee

ASM IP Holding B.V. · NL

Inventors

Joe Margetis · Gilbert, US
John Tolle · Gilbert, US

Key dates

Filing date	Jun 19, 2017
Grant date	Aug 20, 2019
Priority date	—
Expiry date	Jun 19, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/832
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for forming a thick defect-free epitaxial layer is disclosed. The process may comprise forming a buffer layer and a sacrificial layer prior to forming the thick defect-free epitaxial layer. The sacrificial layer and the thick defect-free epitaxial layer may be formed of the same material and at the same process conditions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.