Joe Margetis
18Patents
4h-index
18Co-inventors
49Inventor score
Filing activity: Aug 14, 2015 → Jun 14, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9647114B2 | Methods of forming highly p-type doped germanium tin films and structures and devices including the films | Electricity | 462 | Active |
| US9905420B2 | Methods of forming silicon germanium tin films and structures and devices including the films | Electricity | 449 | Active |
| US9892913B2 | Radial and thickness control via biased multi-port injection settings | Electricity | 448 | Active |
| US10262859B2 | Process for forming a film on a substrate using multi-port injection assemblies | Electricity | 396 | Active |
| US11168395B2 | Temperature-controlled flange and reactor system including same | Chemistry; Metallurgy | 3 | Active |
| US10446393B2 | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures | Electricity | 3 | Active |
| US10612136B2 | Temperature-controlled flange and reactor system including same | Chemistry; Metallurgy | 3 | Active |
| US10541333B2 | Method for depositing a group IV semiconductor and related semiconductor device structures | Electricity | 1 | Active |
| US11374112B2 | Method for depositing a group IV semiconductor and related semiconductor device structures | Electricity | 1 | Active |
| US11018002B2 | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures | Electricity | 0 | Active |
| US12406846B2 | Method for depositing boron and gallium containing silicon germanium layers | Electricity | 0 | Active |
| US12057314B2 | Methods for silicon germanium uniformity control using multiple precursors | Electricity | 0 | Active |
| US11557474B2 | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation | Electricity | 0 | Active |
| US10685834B2 | Methods for forming a silicon germanium tin layer and related semiconductor device structures | Emerging Cross-Sectional Technologies | 0 | Active |
| US10388509B2 | Formation of epitaxial layers via dislocation filtering | Electricity | 0 | Active |
| US11996289B2 | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods | Electricity | 0 | Active |
| US11004977B2 | Method for depositing a group IV semiconductor and related semiconductor device structures | Electricity | 0 | Active |
| US12363960B2 | Method for depositing a Group IV semiconductor and related semiconductor device structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.