Method of forming silicon nitride film, film forming apparatus and storage medium
US10388511B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 11, 2018 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | May 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method of forming a silicon nitride film including: arranging substrates in a process vessel; and forming a silicon nitride film on the substrates in a batch by repeating a cycle including: a first purge step of purging the process vessel while heating the process vessel and making an interior of the process vessel be in a predetermined depressurized state; a film-forming raw material gas adsorbing step of adsorbing a chlorine-containing silicon compound to the substrates by supplying a film-forming raw material gas composed of the chlorine-containing silicon compound into the process vessel; a second purge step of purging the process vessel; and a nitriding step of nitriding the substrates by supplying a nitriding gas into the process vessel, and wherein in each of the cycle, a hydrogen radical purge step is performed between the film-forming raw material gas adsorbing step and the nitriding step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.