Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 · kind B1 · utility
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1,241References
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Key dates
| Filing date | Jul 3, 2018 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Jul 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Si-free C-containing film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.