Substrate processing apparatus and substrate processing method
US10388544B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 19, 2015 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Feb 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.