Patent · US Active

Methods of forming a gate-to-source/drain contact structure

US10388654B2 · kind B2 · utility

0Cited by

24References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Judson R. Holt · Wappingers Falls, US
George R. Mulfinger · Gansevoort, US
Timothy J. McArdle · Ballston Lake, US
Thomas Merbeth · Dresden, DE
Omur Isil Aydin · Dresden, DE
Ruilong Xie · Niskayuna, US

Key dates

Filing date	Jan 11, 2018
Grant date	Aug 20, 2019
Priority date	—
Expiry date	Jan 11, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/853
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

One illustrative method disclosed herein includes, among other things, performing at least one etching process to expose at least a portion of an upper surface of a gate electrode of a first transistor device and at least a vertical portion of one side surface of the gate electrode and performing a material growth process to form a conductive gate-to-source/drain (GSD) contact structure that conductively couples the gate electrode of the first transistor device to a source/drain region of the first transistor device, wherein the conductive GSD contact structure comprises a non-single crystal material portion positioned on previously exposed portions of the gate electrode and a single crystal material portion positioned in the source/drain region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.