Accumulation enhanced insulated gate bipolar transistor (AEGT) and methods of use thereof
US10388726B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 24, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods herein are directed towards semiconductor devices and methods of manufacture thereof, including the formation of a plurality of passive trenches that act as a single passive trench and may be connected to gate electrodes and/or emitters in various embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.