Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
US10388753B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2018 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Mar 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. In examples, the regrowth takes place over exposed portions of the channel layer in the source and drain regions of the device, and the regrown material has a composition different from the barrier layer. In other examples, the regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.