Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers
US10388853B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory element for Magnetic Random Access Memory. The magnetic memory element has improved reference layer magnetic pinning and reduced dipole fringing field effect on the magnetic free layer. The magnetic memory element includes a magnetic reference layer having a pinned magnetization, a magnetic free layer having a switchable magnetization and a non-magnetic barrier layer between the magnetic reference layer and the magnetic free layer. The magnetic reference layer is exchange coupled with a synthetic anti-ferromagnetic structure that includes a first multi-layer structure, a second multi-layer structure and a non-magnetic anti-parallel exchange coupling layer located between the first and second multi-layer structures. Each of the first and second multi-layer structures includes a plurality of bi-layers of Pt and Co, with the Pt being deposited first and located below the Co.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.