Fully aligned via employing selective metal deposition

US10395986B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Benjamin D. Briggs · Cohoes, US
• James J. Kelly · Schenectady, US
• Donald F. Canaperi · Bridgewater, US
• Michael Rizzolo · Delmar, US
• Lawrence A. Clevenger · Saratoga Springs, US

Key dates

• Filing date: May 30, 2018
• Grant date: Aug 27, 2019
• Expiry date: May 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76843
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is presented for creating a fully-aligned via (FAV) by employing selective metal deposition. The method includes forming metal lines within a first inter-layer dielectric (ILD) layer, forming a second ILD layer over the first ILD layer, forming a lithographic stack over the second ILD layer to define areas where via growth is prevented, recessing the lithographic stack to expose a top surface of the metal lines where via growth is permitted by the lithographic stack, and performing metal growth over the exposed top surface of the metal lines where via growth is permitted.