Multi-phase half bridge driver package and methods of manufacture

US10396018B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Chau Fatt Chiang · Melaka City, MY
• Chan Lam Cha · Melaka City, MY
• Wei Han Koo · Melaka City, MY
• Andreas Kucher · Schwedt, DE
• Theng Chao Long · Melaka City, MY

Key dates

• Filing date: Nov 27, 2017
• Grant date: Aug 27, 2019
• Expiry date: Nov 27, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H02P27/04
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor package includes a plurality of half bridge assemblies each including a metal lead, a first power transistor die attached to a first side of the metal lead, and a second power transistor die disposed under the first power transistor die and attached to a second side of the metal lead opposite the first side. Each metal lead has a notch which exposes one or more bond pads at a side of the second power transistor die attached to the metal lead. The semiconductor package also includes a controller die configured to control the power transistor dies. Each power transistor die, each metal lead and the controller die are embedded in a mold compound. Bond wire connections are provided between the controller die and the one or more bond pads at the side of each second power transistor die exposed by the notch in the corresponding metal lead.