Etching compositions and methods for using same
US10400167B2 · kind B2 · utility
1Cited by
3References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 21, 2016 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Nov 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/124
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0 to about 5% by weight of a buffering agent; from about 0 to about 15% by weight of a corrosion inhibitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.