Plasma processing apparatus and method of manufacturing semiconductor device
US10403478B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2015 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Mar 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention increases uniformity of plasma processing in a surface to be processed of an object to be processed or increases uniformity of plasma processing between objects to be processed. There is provided a plasma processing apparatus including: a processing container; a gas supply system; an exhaust system; a plasma generating unit; a gas flow path installed between an outer wall of the processing container and the plasma generating unit, the gas flow path guiding a temperature controlling gas to flow along the outer wall of the processing container; a plurality of gas introduction holes disposed along a circumferential direction of the processing container and configured to introduce the temperature controlling gas into the gas flow path; and a gas exhaustion hole configured to exhaust the temperature controlling gas passed through the gas flow path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.