Systems and approaches for semiconductor metrology and surface analysis using secondary ion mass spectrometry

US10403489B2 · kind B2 · utility

Assignee

• NOVA MEASURING INSTRUMENTS INC. · IL

Inventors

• David A. Reed · Belmont, US
• Bruno W. Schueler · San Jose, US
• Bruce H. Newcome · Sunnyvale, US
• Rodney Smedt · Los Gatos, US
• Chris Bevis · Los Gatos, US

Key dates

• Filing date: Jul 18, 2018
• Grant date: Sep 3, 2019
• Expiry date: Jul 18, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L22/12
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).